The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Jul. 26, 2018
Applicant:
Kla-tencor Corporation, Milpitas, CA (US);
Inventor:
Hari Pathangi Sriraman, Chennai, IN;
Assignee:
KLA-Tencor Corporation, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06T 7/00 (2017.01); G06N 3/08 (2006.01); G06K 9/62 (2006.01); G06K 9/20 (2006.01); G06K 9/46 (2006.01); G06N 20/00 (2019.01);
U.S. Cl.
CPC ...
G06T 7/0006 (2013.01); G06K 9/2054 (2013.01); G06K 9/46 (2013.01); G06K 9/6267 (2013.01); G06N 3/08 (2013.01); G06N 20/00 (2019.01); G06T 7/001 (2013.01); G06T 2207/10061 (2013.01); G06T 2207/20081 (2013.01); G06T 2207/20084 (2013.01); G06T 2207/20224 (2013.01); G06T 2207/30148 (2013.01);
Abstract
A defect in an image of a semiconductor wafer can be classified as an initial defect type based on the pixels in the image. Critical dimension uniformity parameters associated with the defect type can be retrieved from an electronic data storage unit. A level of defectivity of the defect can be quantified based on the critical dimension uniformity parameters. Defects also can be classified based on critical dimension attributes, topography attributes, or contrast attributes to determine a final defect type.