The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2020

Filed:

Nov. 22, 2019
Applicant:

Carl Zeiss Smt Gmbh, Oberkochen, DE;

Inventor:

Michael Patra, Oberkochen, DE;

Assignee:

Carl Zeiss SMT GmbH, Oberkochen, unknown;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/095 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70575 (2013.01); G03F 7/0037 (2013.01); G03F 7/095 (2013.01); G03F 7/70333 (2013.01); G03F 7/70458 (2013.01); G03F 7/70466 (2013.01); G03F 7/70808 (2013.01);
Abstract

The disclosure provides a projection exposure method for exposing a substrate arranged in the region of an image plane of a projection lens with at least one image of a pattern of a mask arranged in the region of an object plane of the projection lens. A substrate is coated with a radiation-sensitive multilayer system including a first photoresist layer composed of a first photoresist material and, between the first photoresist layer and the substrate and a separately applied second photoresist layer composed of a second photoresist material. The first photoresist material has a relatively high first sensitivity in a first wavelength range and a second sensitivity, which is lower relative to the first sensitivity, in a second wavelength range separate from the first wavelength range. The second photoresist material has an exposure-suitable second sensitivity in the second wavelength range.


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