The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Sep. 22, 2014
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Manish Chandhok, Beaverton, OR (US);
Todd R. Younkin, Cary, NC (US);
Sang H. Lee, Saratogoa, CA (US);
Charles H. Wallace, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); G03F 7/20 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); G03F 7/00 (2006.01); G03F 7/09 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70 (2013.01); G03F 7/0035 (2013.01); G03F 7/094 (2013.01); G03F 7/2039 (2013.01); G03F 7/70466 (2013.01); H01L 21/0273 (2013.01); H01L 21/0274 (2013.01); H01L 21/0277 (2013.01); H01L 21/0332 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01);
Abstract
Techniques related to multi-pass patterning lithography, device structures, and devices formed using such techniques are discussed. Such techniques include exposing a resist layer disposed over a grating pattern with non-reflecting radiation to generate an enhanced exposure portion within a trench of the grating pattern and developing the resist layer to form a pattern layer having a pattern structure within the trench of the grating pattern.