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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10678133 B1

PDFFull Text
Date of Patent:
Jun. 09, 2020

Filed:

Dec. 16, 2019

Method for forming photoresist layer

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chi-Hung Liao, New Taipei, TW;

Wei-Chang Cheng, Taichung, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

JCIPRNET

Primary Examiner:

Mounir S Amer

Int. Cl.
CPC ...
H05B 3/22 (2006.01); H01L 21/3213 (2006.01); G03F 7/09 (2006.01); G03F 7/16 (2006.01); G03F 7/095 (2006.01); G03F 7/30 (2006.01); G01K 13/02 (2006.01); H01L 21/67 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G03F 7/094 (2013.01); G01K 13/02 (2013.01); G03F 7/095 (2013.01); G03F 7/16 (2013.01); G03F 7/162 (2013.01); G03F 7/30 (2013.01); H01L 21/32139 (2013.01); H01L 21/67017 (2013.01); H01L 21/67109 (2013.01); H01L 21/67248 (2013.01); H05B 3/22 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01);
Abstract

A method for forming a photoresist layer includes the following steps. A first photoresist layer is formed on a first wafer provided on a platen. The platen includes a plurality of temperature zones being at a first set of process temperatures. A first etching process is performed on the first wafer to form a first patterned metal layer. A profile variation of the first patterned metal layer with respect to a reference profile is determined. The first set of process temperatures is adjusted to a second set of process temperatures according to the profile variation. A second photoresist layer is formed on a second wafer provided on the platen with the temperature zones being at the second set of process temperatures respectively.

Find Patent Forward Citations

Liao, Chi-Hung. (2020). Method for forming photoresist layer (U.S. Patent No. 10678133). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10678133

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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