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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10678126 B1

PDFFull Text
Date of Patent:
Jun. 09, 2020

Filed:

Apr. 18, 2018

Semiconductor mask blanks with a compatible stop layer

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chih-Chiang Tu, Tauyen, TW;

Chun-Lang Chen, Tainan County, TW;

Boming Hsu, Tainan, TW;

Tran-Hui Shen, Yunlin County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Christopher G Young

Int. Cl.
CPC ...
G03F 1/26 (2012.01); G03F 1/46 (2012.01); H01L 21/31 (2006.01); H01L 21/311 (2006.01); H01L 21/66 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
G03F 1/26 (2013.01); G03F 1/46 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31 (2013.01); H01L 21/31116 (2013.01); H01L 22/26 (2013.01);
Abstract

A mask for semiconductor manufacturing includes a mask substrate, a shifter layer over the mask substrate, a stop layer over and in contact with the shifter layer, and an absorber layer over the stop layer. The shifter layer includes each material of a set of materials, the materials being combined in a first proportion in the shifter layer. The stop layer includes each material of the set of materials, the materials being combined in a second proportion in the stop layer that is different from the first proportion.

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