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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10672934 B1

PDFFull Text
Date of Patent:
Jun. 02, 2020

Filed:

Jan. 17, 2018

Spad image sensor and associated fabricating method

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Tzu-Jui Wang, Kaohsiung County, TW;

Jhy-Jyi Sze, Hsin-Chu, TW;

Yuichiro Yamashita, Hsinchu, TW;

Kuo-Chin Huang, Yilan County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;

Attorneys:

WPAT, P.C., Intellectual Property Attorneys

Anthony King

Primary Examiner:

Sheng-Bai Zhu

Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 27/144 (2006.01); H01L 31/16 (2006.01); H01L 27/146 (2006.01); H01L 31/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14634 (2013.01); H01L 27/14645 (2013.01); H01L 27/14647 (2013.01); H01L 27/14689 (2013.01); H01L 31/02027 (2013.01); H01L 27/1462 (2013.01);
Abstract

A single photon avalanche diode (SPAD) image sensor is disclosed. The SPAD image sensor include: a substrate of a first conductivity type, the substrate having a front surface and a back surface; a deep trench isolation (DTI) extending from the front surface toward the back surface of the substrate, the DTI having a first surface and a second surface opposite to the first surface, the first surface being level with the front surface of the substrate; an epitaxial layer of a second conductivity type opposite to the first conductivity type, the epitaxial layer surrounding sidewalls and the second surface of the DTI; and an implant region of the first conductivity type extending from the front surface to the back surface of the substrate. An associated method for fabricating the SPAD image sensor is also disclosed.

Find Patent Forward Citations

Wang, Tzu-Jui. (2020). Spad image sensor and associated fabricating method (U.S. Patent No. 10672934). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10672934

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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