The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Jul. 30, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); H01L 21/02359 (2013.01); H01L 29/401 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01);
Abstract
A method of forming a semiconductor device structure is provided. The method includes forming an isolation feature over a semiconductor substrate. The semiconductor substrate includes a fin structure over the isolation feature. Two opposing spacer elements are formed over the isolation feature and across the fin structure so as to define a gate opening. The gate opening exposes the fin structure and the isolation feature and inner sidewalls of the gate opening have carbon-containing hydrophobic surfaces. A gate structure is formed in the gate opening with the carbon-containing hydrophobic surfaces.