The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Dec. 18, 2018
Silicon carbide semiconductor device and a method for forming a silicon carbide semiconductor device
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/36 (2006.01); H01L 29/417 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/41 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/0262 (2013.01); H01L 21/02444 (2013.01); H01L 21/02494 (2013.01); H01L 21/02529 (2013.01); H01L 21/02658 (2013.01); H01L 21/02664 (2013.01); H01L 21/26506 (2013.01); H01L 21/324 (2013.01); H01L 29/083 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/36 (2013.01); H01L 29/41725 (2013.01); H01L 29/1606 (2013.01); H01L 29/413 (2013.01); H01L 29/7802 (2013.01);
Abstract
A method for forming a silicon carbide semiconductor device includes forming at least one graphene layer on a surface of a semiconductor substrate and forming a silicon carbide layer of the silicon carbide semiconductor device on the at least one graphene layer. At least one of forming the silicon carbide layer and forming the at least one graphene layer includes: heating the semiconductor substrate an inert gas atmosphere until a predefined temperature is reached.