The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Sep. 06, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Chung-Yu Huang, Tainan, TW;
Kuan-Cheng Su, Taipei, TW;
Tien-Hao Tang, Hsinchu, TW;
Ping-Jui Chen, Pingtung County, TW;
Po-Ya Lai, Changhua County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
An ESD protection semiconductor device is disclosed. The ESD protection semiconductor device includes a substrate and a gate set disposed on the substrate. A plurality of source fins and a plurality of drain fins are formed in the substrate respectively at two sides of the gate set. At least a first doped fin is formed in the substrate at one side of the gate set the same as the source fins. A plurality of isolation structures are formed in one of the drain fins to define at least a second doped fin in the one of the drain fins. The source fins and the drain fins are of a first conductivity type. The first doped fin is of a second conductivity type that is complementary to the first conductivity type. The first doped fin and the second doped fin are electrically connected to each other.