The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Mar. 27, 2018
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hiroki Murakami, Nirasaki, JP;
Takahiro Miyahara, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32091 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01J 37/32467 (2013.01); H01J 37/32513 (2013.01); H01J 37/32568 (2013.01); H01J 37/32715 (2013.01); H01J 37/32724 (2013.01); H01J 37/32743 (2013.01); H01J 37/32834 (2013.01); H01L 21/67069 (2013.01); H01L 21/67109 (2013.01); H01J 37/32082 (2013.01); H01J 37/32559 (2013.01); H01J 2237/002 (2013.01); H01J 2237/334 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01);
Abstract
There is provided an etching method which includes supplying an etching gas including an Hgas or an NHgas to a target substrate having a germanium portion in an excited state; and etching the germanium portion.