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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10672614 B1

PDFFull Text
Date of Patent:
Jun. 02, 2020

Filed:

Nov. 29, 2018

Etching and structures formed thereby

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Kuan-Wei Huang, Taoyuan, TW;

Yu-Yu Chen, Hsinchu, TW;

Chia-Nan Lin, Zhu-ki, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Binh X Tran

Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/67 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/033 (2006.01); H01L 21/3115 (2006.01); H01L 21/3215 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 21/0214 (2013.01); H01L 21/02458 (2013.01); H01L 21/0337 (2013.01); H01L 21/3065 (2013.01); H01L 21/31053 (2013.01); H01L 21/31105 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); H01L 21/32134 (2013.01); H01L 21/32136 (2013.01); H01L 21/67069 (2013.01); H01L 21/67075 (2013.01); H01L 21/31138 (2013.01); H01L 21/31155 (2013.01); H01L 21/3215 (2013.01); H01L 21/32137 (2013.01);
Abstract

Embodiments described herein relate generally to methods for etching structures and the structures formed thereby. In some embodiments, an etch selectivity between a first portion of a material and a second portion of the material is increased. Increasing the etch selectivity includes performing an anisotropic treatment, such as an anisotropic ion implantation, on the material to treat the first portion of the material, and the second portion of the material remains untreated after the anisotropic treatment. After increasing the etch selectivity, the first portion of the material is etched. The etching may be a wet or dry etch, and may further be isotropic or anisotropic.

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