The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Mar. 31, 2016
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Elijah V. Karpov, Portland, OR (US);

Jeffery D. Bielefeld, Forest Grove, OR (US);

James S. Clarke, Portland, OR (US);

Ravi Pillarisetty, Portland, OR (US);

Uday Shah, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/1608 (2013.01); H01L 45/1666 (2013.01); H01L 45/1675 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/146 (2013.01);
Abstract

An embodiment includes a programmable metallization cell (PMC) memory comprising: a top electrode and a bottom electrode; a metal layer between the top and bottom electrodes; and a solid electrolyte (SE) layer between the metal layer and the bottom electrode; wherein (a) the metal layer includes an alloy of first and second metals, and (b) metal ions from the first metal form a conductive path in the SE layer when the top electrode is positively biased and disband the conductive path when the top electrode is negatively biased. Other embodiments are described herein.


Find Patent Forward Citations

Loading…