The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Sep. 10, 2018
Tokyo Electron Limited, Tokyo, JP;
Noel Russell, Waterford, NY (US);
Jeffrey Smith, Clifton Park, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Methods for additive formation of a STT-MRAM metal stack using a deposition process through a pre-patterned template that skims away metal ions that are less likely to enable anisotropic deposition on a substrate. The pre-patterned template is formed from a film stack using patterning techniques to form an opening in the film stack that exposes portions of an underlying substrate where a MTJ will be formed for an MRAM cell. The film stack cavity may be exposed to etch processes that selectively pull back the sidewall, such that other layers in the film stack protrude into the cavity. Additional treatments to the other layers may alter the opening sizes in the other layers. Metal deposited through the cavity such that metal ions with anisotropic characteristics will be skimmed away before reaching the substrate.