The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Aug. 28, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Praveen Joseph, Albany, NY (US);

Indira Seshadri, Niskayuna, NY (US);

Ekmini A. De Silva, Slingerlands, NY (US);

Stuart A. Sieg, Albany, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/0228 (2013.01); H01L 21/0337 (2013.01); H01L 21/76829 (2013.01); H01L 21/823487 (2013.01); H01L 29/0847 (2013.01); H01L 29/6656 (2013.01); H01L 29/66666 (2013.01);
Abstract

A semiconductor device includes a semiconductor fin that extends from a first source/drain to an opposing second source/drain. The semiconductor fin includes a channel region between the first and second source/drains. The semiconductor device further includes a spacer having an upper surface having the second source/drain formed thereon, and a gate structure a gate structure wrapping around the channel region. The gate structure includes a tapered portion that contacts the spacer.


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