The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Dec. 26, 2018
Tokyo Electron Limited, Tokyo, JP;
Yasuo Asada, Nirasaki, JP;
Takehiko Orii, Nirasaki, JP;
Shinji Irie, Nirasaki, JP;
Nobuhiro Takahashi, Nirasaki, JP;
Ayano Hagiwara, Nirasaki, JP;
Tatsuya Yamaguchi, Nirasaki, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.