The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Nov. 12, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Shih-Pei Chou, Tainan, TW;

Chen-Fa Lu, Kaohsiung, TW;

Jiech-Fun Lu, Tainan County, TW;

Yeur-Luen Tu, Taichung, TW;

Chia-Shiung Tsai, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/32 (2006.01); H01L 21/033 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); H01L 21/32 (2013.01); H01L 21/76224 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 21/76807 (2013.01);
Abstract

A semiconductor structure comprises a substrate comprising an interlayer dielectric (ILD) and a silicon layer disposed over the ILD, wherein the ILD comprises a conductive structure disposed therein, a dielectric layer disposed over the silicon layer, and a conductive plug electrically connected with the conductive structure and extended from the dielectric layer through the silicon layer to the ILD, wherein the conductive plug has a length extending from the dielectric layer to the ILD and a width substantially consistent along the length.


Find Patent Forward Citations

Loading…