The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Jun. 26, 2018
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Qi Xie, Leuven, BE;
David de Roest, Kessel-L, BE;
Jacob Woodruff, Phoenix, AZ (US);
Michael Eugene Givens, Scottsdale, AZ (US);
Jan Willem Maes, Wilrijk, BE;
Timothee Blanquart, Tama, JP;
Assignee:
ASM IP Holdings B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 29/36 (2006.01); H01L 29/417 (2006.01); H01L 21/225 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02658 (2013.01); H01L 21/02694 (2013.01); H01L 21/2254 (2013.01); H01L 21/26506 (2013.01); H01L 29/36 (2013.01); H01L 29/41725 (2013.01); H01L 29/0847 (2013.01);
Abstract
A method for improving source/drain performance through conformal solid state doping and its resulting device are disclosed. Specifically, the doping takes place through an atomic layer deposition of a dopant layer. Embodiments of the invention may allow for an increased doping layer, improved conformality, and reduced defect formation, in comparison to alternate doping methods, such as ion implantation or epitaxial doping.