The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Dec. 24, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chia-Yang Wu, Tainan, TW;
Shiu-Ko Jangjian, Tainan, TW;
Keng-Chuan Chang, Hsinchu, TW;
Ting-Siang Su, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H01L 21/285 (2013.01); H01L 21/2855 (2013.01); H01L 21/768 (2013.01); H01L 21/76843 (2013.01); H01L 29/165 (2013.01); H01L 29/40 (2013.01); H01L 29/401 (2013.01); H01L 29/41766 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 29/66636 (2013.01); H01L 29/78 (2013.01); H01L 29/7848 (2013.01); H01L 21/76805 (2013.01); H01L 21/76855 (2013.01); H01L 21/76897 (2013.01);
Abstract
A method of forming a semiconductor device includes depositing a titanium-containing material over a source/drain (S/D), wherein an energy of depositing the titanium-containing material is sufficient to cause re-deposition of a material of the S/D along sidewalls of a dielectric layer adjacent the S/D to form protrusions extending from a top surface of the S/D. The method further includes annealing the semiconductor device to form a silicide layer in the S/D and in the protrusions.