The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Nov. 06, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Marco Sforzin, Cernusco sul Naviglio, IT;

Mattia Robustelli, Milan, IT;

Innocenzo Tortorelli, Cernusco sul Naviglio, IT;

Mario Allegra, Monza, IT;

Paolo Amato, Treviglio, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G06F 11/10 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G06F 11/1068 (2013.01); G11C 13/0061 (2013.01); G11C 13/0069 (2013.01); G11C 29/52 (2013.01); G11C 2013/0054 (2013.01);
Abstract

In an example, a first data structure can be read with a first read voltage dedicated to the first data structure. A second data structure that stores a larger quantity of data than the first data structure can be with a second read voltage that is dedicated to the second data structure. The first data structure can be with a third read voltage in response to a quantity of errors in reading the first data structure being greater than or equal to a first threshold quantity. The second data structure can be read with the third read voltage in response to a quantity of errors in reading the second data structure being greater than or equal to a second threshold quantity. The read voltages can be based on a temperature of an apparatus that includes the first and second data structures.


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