The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

May. 03, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Anjana Singh, Hsinchu, TW;

Cheng Hung Lee, Hsinchu, TW;

Hau-Tai Shieh, Hsinchu, TW;

Yi-Tzu Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/08 (2006.01); G11C 11/418 (2006.01);
U.S. Cl.
CPC ...
G11C 11/418 (2013.01); G11C 8/08 (2013.01);
Abstract

Devices and methods are provided for word line pulse width control for a static random access memory (SRAM) devices. An inverter within a pre-decoder circuit receives a first input of a clocked address. The inverter determines an output based on the clocked address. An electrical load of a decoder driver circuit of the SRAM device is modified based on the output. Current to a transistor coupled at a common node is provided. The transistor is configured to electrically couple a plurality of transistors of the decoder driver circuit within the SRAM device.


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