The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Jan. 20, 2016
Applicant:

Mentor Graphics Corporation, Wilsonville, OR (US);

Inventors:

James C. Word, Portland, OR (US);

Shady AbdelWahed, Cairo, EG;

Assignee:

Mentor Graphics Corporation, Wilsonville, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 1/36 (2012.01); G06F 30/20 (2020.01); G06F 30/398 (2020.01); G06F 19/00 (2018.01); G06F 119/18 (2020.01);
U.S. Cl.
CPC ...
G03F 1/36 (2013.01); G06F 30/20 (2020.01); G06F 30/398 (2020.01); G06F 19/00 (2013.01); G06F 2119/18 (2020.01);
Abstract

This application discloses a computing system to simulate a wafer image based on a mandrel mask and a block mask to be utilized to print a final wafer image on a substrate. To simulate the wafer image the computing system can estimate dummy sidewalls based on the mandrel mask, estimate contours of the block mask, and determine the simulated wafer image based on differences between the dummy sidewalls and the estimated contours of the block mask. The computing system can compare the simulated wafer image against a target wafer image in a layout design to identify hotspots where the simulated wafer image deviates from the target wafer image. Based on the identified hotspots, the computing system can modify the target wafer image in the layout design, prioritize edge modification in a subsequent optical proximity correction process, or modify computation of image error, which drives the optical proximity correction process.


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