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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10651181 B1

PDFFull Text
Date of Patent:
May. 12, 2020

Filed:

Apr. 02, 2019

Method for producing pillar-shaped semiconductor device

Applicant:

Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;

Inventors:

Fujio Masuoka, Tokyo, JP;

Nozomu Harada, Tokyo, JP;

Hiroki Nakamura, Tokyo, JP;

Phillipe Matagne, Leuven, BE;

Yoshiaki Kikuchi, Leuven, BE;

Assignee:

UNISANTIS ELECTRONICS SINGAPORE PTE. LTD., Singapore, SG;

Attorney:

Brinks Gilson & Lione

Primary Examiner:

Evren Seven

Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/49 (2006.01); H01L 21/308 (2006.01); H01L 21/8238 (2006.01); H01L 29/16 (2006.01); H01L 29/51 (2006.01); H01L 21/311 (2006.01); H01L 23/532 (2006.01); H01L 27/11 (2006.01); H01L 23/485 (2006.01); H01L 29/423 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/20 (2006.01); H01L 21/225 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/76 (2006.01); H01L 21/764 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 21/2018 (2013.01); H01L 21/2253 (2013.01); H01L 21/2255 (2013.01); H01L 21/2257 (2013.01); H01L 21/28088 (2013.01); H01L 21/28114 (2013.01); H01L 21/28123 (2013.01); H01L 21/28132 (2013.01); H01L 21/28518 (2013.01); H01L 21/28568 (2013.01); H01L 21/3086 (2013.01); H01L 21/76 (2013.01); H01L 21/764 (2013.01); H01L 21/7684 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 21/76898 (2013.01); H01L 21/8221 (2013.01); H01L 21/823418 (2013.01); H01L 21/823456 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 21/823487 (2013.01); H01L 21/823807 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 23/485 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/11 (2013.01); H01L 29/04 (2013.01); H01L 29/0657 (2013.01); H01L 29/1037 (2013.01); H01L 29/16 (2013.01); H01L 29/401 (2013.01); H01L 29/41741 (2013.01); H01L 29/4238 (2013.01); H01L 29/42356 (2013.01); H01L 29/42376 (2013.01); H01L 29/42392 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66666 (2013.01); H01L 29/66787 (2013.01); H01L 29/7827 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/76805 (2013.01); H01L 21/76829 (2013.01); H01L 23/53257 (2013.01); H01L 29/665 (2013.01);
Abstract

The method for producing a pillar-shaped semiconductor device includes a step of forming a tubular SiOlayer that surrounds side surfaces of a Playerand Nlayersandformed on a Si pillarby epitaxial crystal growth, forming an AlO layeron a periphery of the SiOlayer, forming a tubular contact hole by etching the tubular SiOlayer using the AlO layeras a mask, and filling the contact hole with W layers, andto form tubular W layers, and(including a buffer conductor layer) that have an equal width when viewed in plan and are in contact with side surfaces of the tops of the Playerand the Nlayersand

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