The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Jul. 11, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 49/02 (2006.01); H01L 21/84 (2006.01); H01L 21/761 (2006.01); G06F 17/50 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0802 (2013.01); G06F 17/5036 (2013.01); H01L 21/761 (2013.01); H01L 21/76224 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 28/20 (2013.01); H01L 29/0646 (2013.01);
Abstract
A semiconductor device includes a substrate, a dielectric layer over the substrate, a first resistor element embedded within the dielectric layer, a second resistor element embedded within the dielectric layer, a first doped well within the substrate, the first doped well being aligned with the first resistor element, and a second doped well within the substrate, the second doped well being aligned with the second resistor element, the second doped well being non-contiguous with the first doped well.