The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Jan. 31, 2019
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Rudolf Berger, Regensburg, DE;

Wolfgang Lehnert, Lintach, DE;

Gerhard Metzger-Brueckl, Geisenfeld, DE;

Guenther Ruhl, Regensburg, DE;

Roland Rupp, Lauf, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01L 21/02 (2006.01); H01L 21/78 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); H01L 21/02002 (2013.01); H01L 21/7813 (2013.01); H01L 29/66712 (2013.01); H01L 29/7813 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68381 (2013.01);
Abstract

This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.


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