The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Dec. 14, 2016
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); H01J 37/32 (2006.01); H01L 21/768 (2006.01); H01L 21/3065 (2006.01); C23C 14/35 (2006.01); C23C 14/54 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32091 (2013.01); C23C 14/3492 (2013.01); C23C 14/35 (2013.01); C23C 14/54 (2013.01); H01J 37/3266 (2013.01); H01J 37/32669 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 21/76898 (2013.01); H01J 2237/334 (2013.01);
Abstract
A substrate processing method performed by a substrate processing apparatus is provided. The substrate processing method comprises: setting a magnetic pole on a processing space side of each electromagnet belonging to one of first, second and third electromagnet groups to be different from a magnetic pole on the processing space side of each electromagnet belonging to the other two electromagnet groups; generating an electric field by applying a high frequency power to a lower electrode; and performing a first process on the substrate with plasma generated by the electric field.