The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Apr. 07, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ya-Ching Chang, Hsinchu, TW;
Chen-Yu Liu, Kaohsiung, TW;
Cheng-Han Wu, Taichung, TW;
Ching-Yu Chang, Yuansun Village, TW;
Chin-Hsiang Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsnichu, TW;
Abstract
A resist material and methods for forming a semiconductor structure including using the resist material are provided. The method for forming a semiconductor structure includes forming a resist layer over a substrate and exposing a portion of the resist layer to form an exposed portion of the resist layer by performing an exposure process. The method for forming a semiconductor structure further includes developing the resist layer in a developer. In addition, the resist layer is made of a resist material including a photosensitive polymer and a contrast promoter, and a protected functional group of the photosensitive polymer is deprotected to form a deprotected functional group during the exposure process, and a functional group of the contrast promoter bonds to the deprotected functional group of the photosensitive polymer.