The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Aug. 26, 2016
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Teruhiko Kodama, Koshi, JP;
Masashi Enomoto, Koshi, JP;
Masahide Tadokoro, Koshi, JP;
Takafumi Hashimoto, Koshi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/16 (2006.01); B05C 9/14 (2006.01); B05C 11/08 (2006.01); G01B 11/06 (2006.01); G01B 11/24 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01L 21/68 (2006.01); H01L 21/027 (2006.01); G01B 11/02 (2006.01); G03F 7/11 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G03F 7/162 (2013.01); B05C 9/14 (2013.01); B05C 11/08 (2013.01); G01B 11/022 (2013.01); G01B 11/06 (2013.01); G01B 11/2433 (2013.01); G03F 7/11 (2013.01); G03F 7/168 (2013.01); H01L 21/0271 (2013.01); H01L 21/0276 (2013.01); H01L 21/02115 (2013.01); H01L 21/02282 (2013.01); H01L 21/6715 (2013.01); H01L 21/67178 (2013.01); H01L 21/67253 (2013.01); H01L 21/67259 (2013.01); H01L 21/67288 (2013.01); H01L 21/67742 (2013.01); H01L 21/67766 (2013.01); H01L 21/681 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01);
Abstract
A substrate processing method, includes acquiring a height distribution along a radial direction of a substrate in a peripheral edge portion of a front surface of the substrate, forming an underlayer film on the entire front surface of the substrate so as to correct a drop of a height of the peripheral edge portion based on the height distribution, and forming a resist film on the entire surface of the underlayer film.