The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Feb. 06, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Hsiu-Ting Chen, Tainan, TW;
Yi-Ming Huang, Tainan, TW;
Shih-Chieh Chang, Taipei, TW;
Hsing-Chi Chen, Hsin-Chu, TW;
Pei-Ren Jeng, Chu-Bei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/167 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/167 (2013.01); H01L 29/0847 (2013.01); H01L 29/32 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01);
Abstract
A method includes forming a recess in a semiconductor substrate, the recess being adjacent to a gate stack, performing an epitaxial growth process within the recess to form a straining region, and forming a defect within the straining region in-situ with the epitaxial growth process.