The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Jan. 05, 2016
Applicant:

Nexperia B.v.;

Inventors:

Zhihao Pan, Hamburg, DE;

Friedrich Hahn, Schenefeld, DE;

Steffen Holland, Hamburg, DE;

Olaf Pfennigstorf, Hamburg, DE;

Jochen Wynants, Hamburg, DE;

Hans-Martin Ritter, Hamburg, DE;

Assignee:

Nexperia B.V., Nijmegan, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/532 (2006.01); H01L 21/74 (2006.01); H01L 21/78 (2006.01); H01L 29/866 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/74 (2006.01); H01L 23/00 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 23/31 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49844 (2013.01); H01L 21/743 (2013.01); H01L 21/78 (2013.01); H01L 23/49811 (2013.01); H01L 23/49827 (2013.01); H01L 23/53209 (2013.01); H01L 29/861 (2013.01); H01L 29/866 (2013.01); H01L 29/872 (2013.01); H01L 23/3114 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 27/0248 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/45 (2013.01); H01L 29/74 (2013.01); H01L 29/78 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16227 (2013.01);
Abstract

A semiconductor device and a method of making the same. The device includes a semiconductor substrate provided in a chip-scale package (CSP). The device also includes a plurality of contacts provided on a major surface of the substrate. The device further includes an electrically floating metal layer forming an ohmic contact on a backside of the semiconductor substrate. The device is operable to conduct a current that passes through the substrate from a first of said plurality of contacts to a second of said plurality of contacts via the metal layer on the backside.


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