The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Aug. 08, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Inventors:
Eunwoo Lee, Seongnam-si, KR;
Sangrok Oh, Yongin-si, KR;
Jungmo Sung, Gyeongg-Do, KR;
Jongwoo Sun, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/033 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/0274 (2013.01); H01L 21/0337 (2013.01); H01L 21/3081 (2013.01); H01L 21/3105 (2013.01);
Abstract
A method of forming patterns of a semiconductor device includes forming a photoresist pattern, which contains a first carbon compound, on a substrate, reforming a top surface of the photoresist pattern to form an upper mask layer which contains a second carbon compound, different from the first carbon compound, on the photoresist pattern, and etching a portion of the substrate using the upper mask layer and the photoresist pattern as an etch mask.