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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10643837 B1

PDFFull Text
Date of Patent:
May. 05, 2020

Filed:

Aug. 07, 2018

Method for depositing a silicon nitride film and film deposition apparatus

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Hitoshi Kato, Iwate, JP;

Yutaka Takahashi, Iwate, JP;

Kazumi Kubo, Iwate, JP;

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

IPUSA, PLLC

Primary Examiner:

Thien F Tran

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/687 (2006.01); H01J 37/32 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/768 (2006.01); C23C 16/458 (2006.01); C23C 16/507 (2006.01); C23C 16/04 (2006.01); C23C 16/452 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C23C 16/045 (2013.01); C23C 16/345 (2013.01); C23C 16/4584 (2013.01); C23C 16/45534 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/45551 (2013.01); C23C 16/507 (2013.01); C23C 16/52 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01J 37/32513 (2013.01); H01J 37/32715 (2013.01); H01J 37/32724 (2013.01); H01J 37/32733 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01); H01L 21/76831 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/3321 (2013.01);
Abstract

A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate. In the method, a first adsorption blocking region is formed by adsorbing first chlorine radicals such that an amount of adsorption increases upward from a bottom portion of the recessed pattern. A source gas that contains silicon and chlorine adsorbs on an adsorption site where the first adsorption site is not formed. A molecular layer of a silicon nitride film is deposited so as to have a V-shaped cross section. A second adsorption blocking region is formed by adsorbing second chlorine radicals on the molecular layer of the silicon nitride film. The molecular layer of the silicon nitride film is modified by nitriding the molecular layer while removing the second adsorption blocking region.

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