The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Dec. 07, 2017
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Harry-Hak-Lay Chuang, Paya Lebar Crescent, SG;
Hsia-Wei Chen, Taipei, TW;
Hung Cho Wang, Taipei, TW;
Kuei-Hung Shen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
The present disclosure provides a semiconductor structure and a method for manufacturing the same. The semiconductor structure comprises a memory region. The memory region comprises a bottom via, a recap layer on the BV, a bottom electrode on the recap layer, a magnetic tunneling junction layer on the bottom electrode, and a top electrode on the MTJ layer. The material of the recap layer is different from that of the BV.