The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Mar. 21, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Hsueh-Liang Chou, Jhubei, TW;
Dah-Chuen Ho, Zhubei, TW;
Hui-Ting Lu, Zhudong Township, TW;
Po-Chih Su, New Taipei, TW;
Pei-Lun Wang, Zhubei, TW;
Yu-Chang Jong, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure, in some embodiments, relates to a transistor device having a field plate. The transistor device has a gate electrode disposed over a substrate between a source region and a drain region. One or more dielectric layers are arranged over the gate electrode, and a field plate is arranged over the one or more dielectric layers. The field plate extends from a first outermost sidewall that is directly over an upper surface of the gate electrode to a second outermost sidewall that is between the gate electrode and the drain region and that extends to below the upper surface of the gate electrode.