The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Nov. 21, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kazumi Kubo, Iwate, JP;

Yutaka Takahashi, Iwate, JP;

Hitoshi Kato, Iwate, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/318 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/687 (2006.01); H01J 37/00 (2006.01); H01L 21/677 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); H01J 37/00 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/6719 (2013.01); H01L 21/67748 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01); H01J 37/32 (2013.01); H01L 21/0254 (2013.01); H01L 2924/01017 (2013.01);
Abstract

A film deposition method for depositing a silicon nitride film of selectively depositing on a flat surface of a substrate between minute recesses including a chlorine radical adsorbing step of supplying a chlorine containing gas that is activated onto a front surface of the substrate to cause the chlorine radical to be adsorbed entirely on the front surface of the substrate, a nitriding step of supplying a nitriding gas that is activated onto the substrate on which the chlorine radical adsorbs, causing the chlorine radical adsorbing on the flat surface, and nitride the flat surface from among the front surface of the substrate so as to form a silicon adsorption site, and a raw gas adsorbing step of supplying a raw gas that contains silicon and chlorine onto the substrate so as to cause the raw gas to adsorb onto the silicon adsorption site.


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