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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10629802 B1

PDFFull Text
Date of Patent:
Apr. 21, 2020

Filed:

Oct. 31, 2018

Magnetoresistance device and method for forming the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chiu-Jung Chiu, Tainan, TW;

Yu-Chun Chen, Kaohsiung, TW;

Ya-Sheng Feng, Tainan, TW;

Hung-Chan Lin, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

George R Fourson, Iii

Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); G11C 2211/5615 (2013.01);
Abstract

A magnetoresistance device is disclosed, comprising a bottom electrode, a magnetic tunneling junction (MTJ) disposed on the bottom electrode, a top electrode disposed on the magnetic tunneling junction, a first spacer disposed on the magnetic tunneling junction and covering a sidewall of the top electrode, and a second spacer disposed on the first spacer and conformally covering along a sidewall of the first spacer, a sidewall of the magnetic tunneling junction and a sidewall of the bottom electrode.

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Chiu, Chiu-Jung. (2020). Magnetoresistance device and method for forming the same (U.S. Patent No. 10629802). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10629802

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