The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Nov. 22, 2018
Globalwafers Co., Ltd., Hsinchu, TW;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
An epitaxial structure includes a substrate, a buffer layer, a channel layer, an intermediate layer, and a barrier layer. The buffer layer is disposed on the substrate, the channel layer is disposed on the buffer layer, the barrier layer is disposed on the channel layer, and the intermediate layer is disposed between the channel layer and the barrier layer. The chemical composition of the barrier layer is AlInGaN, and the chemical composition of the intermediate layer is AlInGaN. The lattice constant of the barrier layer is greater than the lattice constant of the intermediate layer. The aluminum (Al) content of at least a portion of the intermediate layer is greater than the Al content of the barrier layer.