The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Jan. 04, 2019
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Shih-Hung Tsai, Tainan, TW;
Po-Kuang Hsieh, Kaohsiung, TW;
Yu-Ting Tseng, Tainan, TW;
Cheng-Ping Kuo, Pingtung County, TW;
Kuan-Hao Tseng, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02194 (2013.01); H01L 21/02356 (2013.01); H01L 21/28167 (2013.01); H01L 21/28255 (2013.01); H01L 29/408 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A semiconductor device includes a metal gate on a substrate, a polysilicon layer on the metal gate, a hard mask on the polysilicon layer, and a source/drain region adjacent to two sides of the metal gate. Preferably, the metal gate includes a ferroelectric (FE) layer on the substrate, a work function metal layer on the FE layer, and a low resistance metal layer on the work function metal layer.