The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
May. 30, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shih-Wen Huang, Tainan, TW;
Chung-Ting Ko, Kaohsiung, TW;
Hong-Hsien Ke, Changhua County, TW;
Chia-Hui Lin, Taichung, TW;
Tai-Chun Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a gate spacer, a source/drain structure, a contact structure, a glue layer and a barrier layer. The gate structure is positioned over a fin structure. The gate spacer is positioned over the fin structure and on a sidewall surface of the gate structure. The source/drain structure is positioned in the fin structure and adjacent to the gate spacer. The contact structure is positioned over the source/drain structure. The glue layer covers a bottom surface and a sidewall surface of the contact structure. The barrier layer encircles the sidewall surface of the contact structure. A bottom surface of the glue layer is exposed to the barrier layer.