The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Aug. 29, 2018
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Hongxi Liu, Singapore, SG;
Baolei Wu, Singapore, SG;
Narayanapillai Kulothungasagaran, Singapore, SG;
Subash Pattabiraman Lakshmipathi, Singapore, SG;
Yew Tuck Clament Chow, Singapore, SG;
Curtis Chun-I Hsieh, Singapore, SG;
Yi Jiang, Singapore, SG;
Jin Ho Lee, Singapore, SG;
Yong Wee Francis Poh, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming a lower contact in a lower interlayer dielectric layer. A base contact layer is formed overlying the lower interlayer dielectric layer and the lower contact, and a base contact is formed by removing a portion of the base contact layer. The base contact is formed in electrical communication with the lower contact. A base interlayer dielectric layer is formed overlying the lower interlayer dielectric layer after forming the base contact, where the base interlayer dielectric layer is adjacent to a base contact side surface. A memory cell is formed overlying the base contact, where the memory cell is in electrical communication with the base contact.