Electrostatic discharge protection semiconductor device

Abstract

An electrostatic discharge (ESD) protection device includes a substrate, a first gate group and a second gate group on the substrate, a drain region and a fourth doped region respectively at two sides of the first gate group, a source region and the fourth doped region respectively at two sides of the second gate group, a first doped region in the substrate and surrounded by the drain region, and a second doped region in the substrate and surrounded by the fourth doped region. The drain region and the source region have a first conductivity type. The first doped region and the second doped region have a second conductivity type complementary to the first conductivity type. The drain region is electrically connected to an input/output pad. The source region is electrically connected to a ground pad. The first doped region and the second doped region are electrically connected to each other.