The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Mar. 13, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Tatsuya Yamaguchi, Yamanashi, JP;

Reiji Niino, Yamanashi, JP;

Hiroyuki Hashimoto, Yamanashi, JP;

Syuji Nozawa, Yamanashi, JP;

Makoto Fujikawa, Yamanashi, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/266 (2006.01); H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); H01L 21/0271 (2013.01); H01L 21/02118 (2013.01); H01L 21/02318 (2013.01); H01L 21/0332 (2013.01); H01L 21/0465 (2013.01); H01L 21/266 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01);
Abstract

A method for manufacturing a semiconductor device by processing a substrate, the method includes forming a first film of a polymer having urea bonds by supplying a polymerization raw material to a surface of the substrate, subsequently, forming a pattern by etching the first film, and subsequently, forming a second film of a material different from the polymer of the first film by performing a substitution processing to the first film by supplying a reaction gas, which reacts with the polymerization raw material to generate a product, to the substrate while heating the substrate to depolymerize the polymer.


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