The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Oct. 14, 2016
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Masahiko Tomita, Nirasaki, JP;
Hiroyuki Takahashi, Tokyo, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/302 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/02049 (2013.01); H01L 21/0337 (2013.01); H01L 21/302 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01); H01L 21/67207 (2013.01); H01L 21/68707 (2013.01);
Abstract
A substrate treatment method capable of obtaining a flat processing target film. Molecules of an HF gas are adsorbed onto a corner SiOlayer remaining in a corner portion of a groove of a wafer subjected to an oxide film removal process. An excess HF gas is discharged. An NHgas is supplied toward the corner SiOlayer onto which the molecules of the HF gas are adsorbed. AFS is formed by reacting the corner SiOlayer, the HF gas and the NHgas with each other. The AFS is sublimated and removed.