The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Mar. 13, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zonghui Su, San Jose, CA (US);

Vinay Prabhakar, Cupertino, CA (US);

Abdul Aziz Khaja, San Jose, CA (US);

Jeongmin Lee, San Ramon, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); B08B 7/00 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02087 (2013.01); B08B 7/0035 (2013.01); H01J 37/3244 (2013.01); H01J 37/32715 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01J 37/32357 (2013.01); H01J 2237/334 (2013.01);
Abstract

Methods for processing a substrate, such as bevel etch processing, are provided. In one embodiment, a method includes placing a substrate on a cover plate inside of a processing chamber, where the substrate has a center and a bevel edge and contains a dielectric layer thereon, the processing chamber contains a mask disposed above the substrate and an edge ring disposed under the substrate, the edge ring has an annular body, and the cover plate is disposed on a support assembly. The method further includes heating the substrate with a heater attached to the support assembly, raising the edge ring to contact the mask, flowing a process gas containing an etchant along an outer surface of the mask and to the bevel edge, where the process gas is ignited to produce a plasma, and exposing an upper surface of the substrate at the bevel edge to the process gas.


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