The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Feb. 15, 2019
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Lei Chen, Sunnyvale, CA (US);
Xin Guo, San Jose, CA (US);
Ali Khakifirooz, Los Altos, CA (US);
Aliasgar Madraswala, Folsom, CA (US);
Yogesh B. Wakchaure, Folsom, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 16/26 (2006.01); G06F 11/07 (2006.01); G11C 7/22 (2006.01); G11C 29/02 (2006.01); G11C 29/52 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G06F 11/076 (2013.01); G11C 7/22 (2013.01); G11C 16/26 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 29/52 (2013.01); G11C 7/1066 (2013.01); G11C 2207/2254 (2013.01); G11C 2207/2272 (2013.01);
Abstract
An embodiment of a semiconductor apparatus may include technology to determine an error rate associated with a read request for a persistent storage media, compare the determined error rate against a pre-fail threshold, and adjust a read voltage shift direction for the persistent storage media if the determined error rate exceeds the pre-fail threshold. Other embodiments are disclosed and claimed.