The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Aug. 07, 2018
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yi-Liang Ye, Kaohsiung, TW;

Chun-Wei Yu, Tainan, TW;

Yu-Ren Wang, Tainan, TW;

Hao-Hsuan Chang, Kaohsiung, TW;

Chia-Wei Hsu, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7854 (2013.01); H01L 21/02164 (2013.01); H01L 21/02225 (2013.01); H01L 21/3247 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

A method of rounding corners of a fin includes providing a substrate with a fin protruding from the substrate, wherein a pad oxide and a pad nitride entirely cover a top surface of the fin. Later, part of the pad oxide is removed laterally to expose part of the top surface of the fin. A silicon oxide layer is formed to contact two sidewalls of the fin and the exposed top surface, wherein two sidewalls and the top surface define two corners of the fin. After forming the silicon oxide layer, an annealing process is performed to round two corners of the fin. Finally, after the annealing process, an STI filling material is formed to cover the pad nitride, the pad oxide and the fin.


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