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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10622250 B1

PDFFull Text
Expired
Date of Patent:
Apr. 14, 2020

Filed:

Feb. 26, 2019

Dielectric gap fill evaluation for integrated circuits

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Isabel Cristina Chu, Westchester, NY (US);

Lawrence A. Clevenger, Rhinebeck, NY (US);

Leigh Anne H. Clevenger, Rhinebeck, NY (US);

Ekmini Anuja De Silva, Slingerlands, NY (US);

Gauri Karve, Cohoes, NY (US);

Fee Li Lie, Albany, NY (US);

Nicole Adelle Saulnier, Albany, NY (US);

Indira Seshadri, Niskayuna, NY (US);

Hosadurga Shobha, Niskayuna, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorney:

Amin, Turocy & Watson, LLP

Primary Examiner:

Elias Ullah

Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76837 (2013.01); H01L 21/3213 (2013.01); H01L 21/76819 (2013.01); H01L 21/76877 (2013.01); H01L 21/76892 (2013.01); H01L 22/14 (2013.01); H01L 23/5226 (2013.01); H01L 23/53228 (2013.01);
Abstract

Apparatus and methods for dielectric gap fill evaluations are provided. In one example, a method can comprise providing a gap fill substrate over one or more interlayer dielectric trenches of a dielectric layer and over a first material located in the one or more interlayer dielectric trenches. The method can also comprise depositing a gap fill candidate material within one or more gap fill substrate trenches of the gap fill substrate. Furthermore, the method can comprise etching the gap fill candidate material until a void within the first material is identified. Additionally, the method can comprise filling the one or more gap fill substrate trenches with a second material to form one or more contacts with the first material to measure a leakage current of one or more pitches.

Find Patent Forward Citations

Chu, Isabel. (2020). Dielectric gap fill evaluation for integrated circuits (U.S. Patent No. 10622250). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10622250

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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