The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Jun. 07, 2018
Applicant:

Kla-tencor Corporation, Milpitas, CA (US);

Inventors:

Nadav Gutman, Zichron Ya'aqov, IL;

Moran Zaberchik, Ahuzat Barak, IL;

Eran Amit, Haifa, IL;

Assignee:

KLA-Tencor Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/68 (2006.01); G06T 1/00 (2006.01); G01B 11/27 (2006.01); G06T 7/00 (2017.01);
U.S. Cl.
CPC ...
H01L 21/681 (2013.01); G01B 11/272 (2013.01); G06T 1/0014 (2013.01); G06T 7/0004 (2013.01); G06T 2207/30148 (2013.01);
Abstract

Methods and systems are disclosed for determining overlay in a semiconductor manufacturing process. Radiation reflected from a diffraction pattern in a metrology target may include +1 and −1 diffraction patterns at different wavelengths and focal positions. The different wavelengths of radiation may be in a waveband where the sensitivity of contrast to wavelength is at a maximum. The reflected radiation may be analysed to obtain measured values of overlay as well as amplitude and/or phase corresponding to points distributed over the target, for different wavelengths and focal positions. The measured values of overlay may undergo a series of operations to determine the overlay. The determination may use an assumption that the amplitude and phase are unequal in the +1 and −1 diffraction orders.


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