The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Feb. 03, 2016
Sakai Display Products Corporation, Sakai-shi, Osaka, JP;
AZ Electronic Materials (Luxembourg) S.a.r.l., Luxembourg, LU;
Nobutake Nodera, Sakai, JP;
Akihiro Shinozuka, Sakai, JP;
Shinji Koiwa, Sakai, JP;
Masahiro Kato, Sakai, JP;
Takao Matsumoto, Sakai, JP;
Takashi Fuke, Kakegawa, JP;
Daishi Yokoyama, Kakegawa, JP;
Katsuto Taniguchi, Kakegawa, JP;
Sakai Display Products Corporation, Sakai-shi, Osaka, JP;
AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L., Luxembourg, LU;
Abstract
The present invention provides a positive type photosensitive siloxane composition in which a film formed by the same has high heat resistance, high strength and high crack resistance, an active matrix substrate in which by-product is not generated, an occurrence of defects is suppressed, and an interlayer insulating film is easily formed at a low cost while having good transmittance, a display apparatus including the active matrix substrate, and a method of manufacturing the active matrix substrate. An active matrix substrate includes a plurality of gate wirings provided so as to extend parallel to each other on an insulating substrate, and a plurality of source wirings provided so as to extend parallel to each other in a direction intersecting the respective gate wirings. An interlayer insulating film and a gate insulating film are interposed at portions including the intersecting portions of the gate wirings and the source wirings, on a lower side of the source wiring. The interlayer insulating film is formed using the positive type photosensitive siloxane composition without using a resist.