The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Jan. 09, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jae-hee Kim, Yongin-si, KR;

Chan Hwang, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO. LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/26 (2012.01); G03F 1/36 (2012.01); H01L 21/283 (2006.01); H01L 21/311 (2006.01); H01L 29/41 (2006.01); G03F 1/32 (2012.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
G03F 1/26 (2013.01); G03F 1/32 (2013.01); G03F 1/36 (2013.01); H01L 21/283 (2013.01); H01L 21/31144 (2013.01); H01L 29/41 (2013.01); H01L 27/10852 (2013.01);
Abstract

A method for fabricating a phase shift mask includes preparing a transmissive substrate on which a first mask region and a second mask region surrounding the first mask region are defined. In the first mask region, main patterns are formed having a first pitch in a first direction and a second direction perpendicular to the first direction. Each of the main patterns has a first area. In at least one row, assist patterns are formed at the first pitch to surround the main patterns. Each of the assist patterns has a second area less than the first area. In the second mask region, dummy patterns are formed in a plurality of rows. The dummy patterns surround the assist patterns at the first pitch. Each of the dummy patterns has a third area greater than the first area.


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