The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Oct. 27, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Kangguo Cheng, Schenectady, NY (US);
Bruce B. Doris, Slingerlands, NY (US);
Hong He, Schenectady, NY (US);
Sivananda K. Kanakasabapathy, Niskayuna, NY (US);
Gauri Karve, Cohoes, NY (US);
Juntao Li, Cohoes, NY (US);
Fee Li Lie, Albany, NY (US);
Derrick Liu, Albany, NY (US);
Chun Wing Yeung, Niskayuna, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/12 (2006.01); H01L 29/161 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7842 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/161 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 29/7849 (2013.01); H01L 29/66545 (2013.01);
Abstract
A semiconductor structure includes a stained fin, a gate upon the strain fin, and a spacer upon a sidewall of the gate and upon an end surface of the strained fin. The end surface of the strained fin is coplanar with a sidewall of the gate. The spacer limits relaxation of the strained fin.